Characterization of parasitic resistances of AlN/GaN/AlGaN HEMTs through TCAD-based device simulations and on-wafer measurements

dc.contributor.author	Subramani, Nandha Kumar
dc.contributor.author	Sahoo, Amit Kumar
dc.contributor.author	Nallatamby, Jean-Christophe
dc.date.accessioned	2019-01-09T09:49:28Z
dc.date.available	2019-01-09T09:49:28Z
dc.date.issued	2016-05
dc.identifier.issn	00189480
dc.identifier.uri	http://hdl.handle.net/123456789/6828
dc.description	p.1351 - 1358	en_US
dc.language.iso	en	en_US
dc.relation.ispartofseries	in:IEEE Transactions on Microwave theory and Techniques, Vol.64, n°5(Mai 2016);
dc.subject	Transistors	en_US
dc.subject	Semiconducteurs	en_US
dc.subject	Technologie silicium sur isolant	en_US
dc.title	Characterization of parasitic resistances of AlN/GaN/AlGaN HEMTs through TCAD-based device simulations and on-wafer measurements	en_US
dc.type	Article	en_US