On-wafer single-pulse thermal load-pull rf characterization of trapping phenomena in AlGaN/GaN HEMTs

dc.contributor.author	Benvegnù, Agostino
dc.contributor.author	Laurent, Sylvain
dc.contributor.author	Meneg, Matteo
dc.date.accessioned	2019-01-07T12:49:41Z
dc.date.available	2019-01-07T12:49:41Z
dc.date.issued	2016-03
dc.identifier.issn	00189480
dc.identifier.uri	http://hdl.handle.net/123456789/6813
dc.description	p.767 - 775	en_US
dc.language.iso	en	en_US
dc.relation.ispartofseries	in: IEEE Transactions on Microwave theory and Techniques, Vol.64, n°3 (mars 2016);
dc.subject	Radiofréquences	en_US
dc.subject	Ondes radioélectriques : Fréquences	en_US
dc.subject	Mesure de courant	en_US
dc.subject	Processus de porteur de Charge	en_US
dc.title	On-wafer single-pulse thermal load-pull rf characterization of trapping phenomena in AlGaN/GaN HEMTs	en_US
dc.type	Article	en_US