Résumé:
We investigated the electrical characteristics of two different Schottky diode as Pt/SiC and Pt/porous SiC, elaborated on highly resistif
hot-pressed p-type 6H-SiC supplied by Goodfellow. The Schottky diode was characterized in air ambient and in vacuum, this latter could
be used for exhaust gas monitoring as gas sensors for different gas (O2, H2, CO, CO2 and hydrocarbure). The result shows an ideality
factor in range 1.1–1.5 with a barrier height varying between 0.780 and 0.950 eV function of the ambient characterization. The result
indicated clearly the dependence of electrical parameters on the surface whose Schottky contact was realized (Pt) and on the ambient
where the electrical tests were performed.
