Electrical properties of Schottky diode Pt/SiC and Pt/porous SiC performed on highly resistif p-type 6H-SiC

dc.contributor.author	Bourenane, K.
dc.contributor.author	Keffous, A.
dc.contributor.author	Nezzal, Gh.
dc.date.accessioned	2020-03-10T10:11:38Z
dc.date.available	2020-03-10T10:11:38Z
dc.date.issued	2007
dc.identifier.uri	http://repository.usthb.dz//xmlui/handle/123456789/8144
dc.description	Configuration requise : PC multimédia et compatible, logiciel d'exploitation + Acrobate.- Titre provenant de l’écran titre.- Description d'après la consultation du 19-09-2006	en_US
dc.description.abstract	We investigated the electrical characteristics of two different Schottky diode as Pt/SiC and Pt/porous SiC, elaborated on highly resistif hot-pressed p-type 6H-SiC supplied by Goodfellow. The Schottky diode was characterized in air ambient and in vacuum, this latter could be used for exhaust gas monitoring as gas sensors for different gas (O2, H2, CO, CO2 and hydrocarbure). The result shows an ideality factor in range 1.1–1.5 with a barrier height varying between 0.780 and 0.950 eV function of the ambient characterization. The result indicated clearly the dependence of electrical parameters on the surface whose Schottky contact was realized (Pt) and on the ambient where the electrical tests were performed.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	Silicon carbide ; Schottky diode ; Platinum ; Porous silicon carbide	en_US
dc.title	Electrical properties of Schottky diode Pt/SiC and Pt/porous SiC performed on highly resistif p-type 6H-SiC	en_US
dc.type	Article	en_US