Simulation de la diffusion d'ions He+ (4keV) par une surface de silicium

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dc.contributor.authorNeffai, Mohammed
dc.date.accessioned2015-11-24T13:13:26Z
dc.date.available2015-11-24T13:13:26Z
dc.date.issued2012
dc.description60 p. : ill. ; 30 cm. (+ CD-Rom)fr_FR
dc.identifier.urihttp://hdl.handle.net/123456789/4042
dc.language.isofrfr_FR
dc.subjectDiffusion (physique nucléaire)fr_FR
dc.subjectHéliumfr_FR
dc.subjectSiliciumfr_FR
dc.subjectSpectresfr_FR
dc.titleSimulation de la diffusion d'ions He+ (4keV) par une surface de siliciumfr_FR
dc.typeThesisfr_FR

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