Characterization of parasitic resistances of AlN/GaN/AlGaN HEMTs through TCAD-based device simulations and on-wafer measurements

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dc.contributor.authorSubramani, Nandha Kumar
dc.contributor.authorSahoo, Amit Kumar
dc.contributor.authorNallatamby, Jean-Christophe
dc.date.accessioned2019-01-09T09:49:28Z
dc.date.available2019-01-09T09:49:28Z
dc.date.issued2016-05
dc.descriptionp.1351 - 1358en_US
dc.identifier.issn00189480
dc.identifier.urihttp://hdl.handle.net/123456789/6828
dc.language.isoenen_US
dc.relation.ispartofseriesin:IEEE Transactions on Microwave theory and Techniques, Vol.64, n°5(Mai 2016);
dc.subjectTransistorsen_US
dc.subjectSemiconducteursen_US
dc.subjectTechnologie silicium sur isolanten_US
dc.titleCharacterization of parasitic resistances of AlN/GaN/AlGaN HEMTs through TCAD-based device simulations and on-wafer measurementsen_US
dc.typeArticleen_US

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