Influence of thickness and porous structure of SiC layers on the electrical properties of Pt/SiC-pSi and Pd/SiC-pSi Schottky diodes for gas sensing purposes

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dc.date.accessioned2020-03-10T10:23:34Z
dc.date.available2020-03-10T10:23:34Z
dc.date.issued2007-09-19
dc.descriptionConfiguration requise : PC multimédia et compatible, logiciel d'exploitation + Acrobate.- Titre provenant de l’écran titre.- Description d'après la consultation du 19-09-2007en_US
dc.identifier.urihttp://repository.usthb.dz//xmlui/handle/123456789/8146
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectSilicon carbide ; Schottky diodes ; Platinum ; Palladium ; Gas sensorsen_US
dc.titleInfluence of thickness and porous structure of SiC layers on the electrical properties of Pt/SiC-pSi and Pd/SiC-pSi Schottky diodes for gas sensing purposesen_US
dc.typeArticleen_US

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