On-wafer single-pulse thermal load-pull rf characterization of trapping phenomena in AlGaN/GaN HEMTs

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dc.contributor.authorBenvegnù, Agostino
dc.contributor.authorLaurent, Sylvain
dc.contributor.authorMeneg, Matteo
dc.date.accessioned2019-01-07T12:49:41Z
dc.date.available2019-01-07T12:49:41Z
dc.date.issued2016-03
dc.descriptionp.767 - 775en_US
dc.identifier.issn00189480
dc.identifier.urihttp://hdl.handle.net/123456789/6813
dc.language.isoenen_US
dc.relation.ispartofseriesin: IEEE Transactions on Microwave theory and Techniques, Vol.64, n°3 (mars 2016);
dc.subjectRadiofréquencesen_US
dc.subjectOndes radioélectriques : Fréquencesen_US
dc.subjectMesure de couranten_US
dc.subjectProcessus de porteur de Chargeen_US
dc.titleOn-wafer single-pulse thermal load-pull rf characterization of trapping phenomena in AlGaN/GaN HEMTsen_US
dc.typeArticleen_US

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