Etude expérimentale des dégradations des transistors N-MOS induites par des radiations ionisantes ( rayons X)

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dc.contributor.authorDerouiche, Yazid
dc.date.accessioned2015-09-15T09:37:54Z
dc.date.available2015-09-15T09:37:54Z
dc.date.issued2003
dc.description119 p. : fig. ; 29 cm. (+ microfiche, cd).fr_FR
dc.identifier.urihttp://hdl.handle.net/123456789/3329
dc.language.isofrfr_FR
dc.subjectPhysique des matériauxfr_FR
dc.subjectTransistor MOSEFTfr_FR
dc.subjectSilicium,fr_FR
dc.titleEtude expérimentale des dégradations des transistors N-MOS induites par des radiations ionisantes ( rayons X)fr_FR
dc.typeThesisfr_FR

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